EFFECT OF LASER TREATMENT ON THE ELECTROPHYSICAL PROPERTIES OF GALLIUM ARSENIDE SURFACE BARRIER STRUCTURES
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Keywords

laser, electrical properties, thin layer of gallium arsenide, volt-ampere characteristics, alloying impurity.

How to Cite

Pirimbetova , F. (2026). EFFECT OF LASER TREATMENT ON THE ELECTROPHYSICAL PROPERTIES OF GALLIUM ARSENIDE SURFACE BARRIER STRUCTURES. Journal of Science and Innovative Research Studies, 1(1), 85-90. https://doi.org/10.5281/zenodo.18449168

Abstract

Recently, laser treatment has been widely used in scientific experiments to form device structures and study the possibilities of controlling the properties of surface layers of semiconductor materials. At the same time, unlike a free surface, the issues of structural changes in barrier contacts subjected to pulsed laser softening and related changes in electrical properties have been little studied.

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References

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