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Abstract
This article presents a scientific analysis of the fabrication technology and physical properties of metal–insulator–semiconductor structures based on metal oxide thin films. The functional roles of transparent and semiconducting oxides such as ZnO, TiO₂, SnO₂, and In₂O₃, as well as high-k dielectrics including Al₂O₃, HfO₂, and ZrO₂, are considered for MIS/MOS structures. Magnetron sputtering, sol-gel/spin-coating, chemical deposition, and atomic layer deposition are comparatively discussed as key routes for metal oxide film formation. Film thickness, surface morphology, crystal structure, interface states, oxygen vacancies, dielectric permittivity, leakage current, capacitance–voltage, and current–voltage characteristics are identified as the main parameters determining the quality and reliability of MIS structures. The study emphasizes the importance of thickness uniformity, cleanroom conditions, repeated measurements, measurement uncertainty, and normalization of electrical parameters to the electrode area for obtaining reproducible and internationally comparable results.
References
1. Robertson J., Wallace R. M. High-K materials and metal gates for CMOS applications // Materials Science and Engineering: R: Reports. 2015. Vol. 88. P. 1–41. DOI: 10.1016/j.mser.2014.11.001.
2. Spencer J. A., Mock A. L., Jacobs A. G., Schubert M., Zhang Y., Tadjer M. J. A review of band structure and material properties of transparent conducting and semiconducting oxides // Applied Physics Reviews. 2022. Vol. 9. 011315. DOI: 10.1063/5.0078037.
3. Cochran E. A., Woods K. N., Johnson D. W., Page C. J., Boettcher S. W. Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications // Journal of Materials Chemistry A. 2019. Vol. 7. P. 24124–24149. DOI: 10.1039/C9TA07727H.
4. Fortunato E., Barquinha P., Martins R. Oxide semiconductor thin-film transistors: a review of recent advances // Advanced Materials. 2012. Vol. 24. P. 2945–2986. DOI: 10.1002/adma.201103228.
5. Hiraiwa A., Okubo S., Ogura M., Yu F., Kawarada H. Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond // Journal of Applied Physics. 2022. Vol. 132. 125702. DOI: 10.1063/5.0104016.
6. George S. M. Atomic Layer Deposition: An Overview // Chemical Reviews. 2010. Vol. 110. P. 111–131. DOI: 10.1021/cr900056b.
7. Leskelä M., Ritala M. Atomic layer deposition chemistry: recent developments and future challenges // Angewandte Chemie International Edition. 2003. Vol. 42. P. 5548–5554. DOI: 10.1002/anie.200301652.
8. Kukli K., Ritala M., Leskelä M. Atomic layer deposition of high-k oxide thin films // Journal of The Electrochemical Society. 2000. Vol. 147. P. 222–228.
9. Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., Hosono H. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors // Nature. 2004. Vol. 432. P. 488–492. DOI: 10.1038/nature03090.
10. Sze S. M., Ng K. K. Physics of Semiconductor Devices. 3rd ed. Hoboken: Wiley, 2007.
11. ASTM B487. Standard Test Method for Measurement of Metal and Oxide Coating Thickness by Microscopical Examination of Cross Section. ASTM International.
12. ISO 14644-1:2015. Cleanrooms and associated controlled environments — Part 1: Classification of air cleanliness by particle concentration.
13. ISO 25178. Geometrical product specifications (GPS) — Surface texture: Areal. International Organization for Standardization.