Vol. 1 No. 9 (2026), Articles
Vol. 1 No. 9 (2026)

INVESTIGATION OF THE CORRELATION PROPERTIES OF THE SPECKLE FIELD AND WAVEFRONT DISLOCATIONS UNDER THE INFLUENCE OF VOLTAGE AND POLARIZATION IN A SEMICONDUCTOR LASER

Articles
Published 2026-09-26
T. Axmadjanov
National University of Uzbekistan named after Mirzo Ulugbek
O. Maqsadboyeva
National University of Uzbekistan named after Mirzo Ulugbek
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Keywords

Statistical characteristics of the speckle pattern, wavefront dislocations, dependence of coherence on contrast.

How to Cite

Axmadjanov, T., & Maqsadboyeva, O. (2026). INVESTIGATION OF THE CORRELATION PROPERTIES OF THE SPECKLE FIELD AND WAVEFRONT DISLOCATIONS UNDER THE INFLUENCE OF VOLTAGE AND POLARIZATION IN A SEMICONDUCTOR LASER. ILM-FAN VA INNOVATSION TADQIQOTLAR JURNALI, 1(9), 10-22. https://innopublication.com/index.php/jsirs/article/view/1203
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Abstract

This study experimentally investigates the changes in the speckle field generated by semiconductor laser radiation as a function of applied voltage and polarization state. Variations in the degree of coherence, correlation characteristics, and phase structure of the speckle field resulting from changes in the laser operating regime and applied external electrical voltage are analyzed. In addition, the dynamics of speckle structures formed as the radiation passes through a diffuser at different polarization angles are investigated, with particular attention paid to the detection and statistical characterization of wavefront dislocations.

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